Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-02-07
2006-02-07
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S079000, C349S042000, C349S043000
Reexamination Certificate
active
06995394
ABSTRACT:
A thin film transistor array panel is provided, which includes: a pair of first and second gate lines; a data line intersecting the gate lines in an insulating manner; a storage electrode line supplied with a common voltage; a pixel electrode formed in a pixel area defined by the intersections of the first and the second gate lines and the data line and including a plurality of subareas partitioned by cutouts; a direction control electrode formed in the pixel area and including a portion overlapping at least one of the cutouts; a first thin film transistor connected to the pixel electrode, the first signal line, and the third signal line; a second thin film transistor connected to the pixel electrode, the second signal line, and the third signal line; and a third thin film transistor connected to the direction control electrode, the second signal line, and the fourth signal line.
REFERENCES:
patent: 6407791 (2002-06-01), Suzuki et al.
Hong Sung-Kyu
Kim Hee-Seob
Kim Jong-Lae
Shin Kyoung-Ju
Yang Young-Chol
F. Chau & Associates LLC
Nelms David
Samsung Electronics Co,. Ltd.
Tran Long
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