Magnetic random access memory having magnetoresistive element

Details Magnetic random access memory having magnetoresistive element Magnetic random access memory having magnetoresistive element

2006-08-01

2006-08-01

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C365S158000

Reexamination Certificate

active

07084447

ABSTRACT:
A magnetic random access memory includes a magnetoresistive element which has a recording layer, a fixed layer, and an intermediate nonmagnetic layer, the recording layer comprising a first ferromagnetic layer formed on the intermediate nonmagnetic layer, a first nonmagnetic layer formed on the first ferromagnetic layer, a second ferromagnetic layer formed on the first nonmagnetic layer and magnetically coupled with the first ferromagnetic layer by first magnetic coupling, a second nonmagnetic layer formed on the second ferromagnetic layer, and a third ferromagnetic layer formed on the second nonmagnetic layer and magnetically coupled with the second ferromagnetic layer by second magnetic coupling, wherein one of a state in which the first magnetic coupling is anti-ferromagnetic coupling and the second magnetic coupling is ferromagnetic coupling, and a state in which the first magnetic coupling is ferromagnetic coupling and the second magnetic coupling is anti-ferromagnetic coupling is obtained.

REFERENCES:
patent: 6545906 (2003-04-01), Savtchenko et al.
patent: 6611405 (2003-08-01), Inomata et al.
patent: 6730949 (2004-05-01), Kishi et al.
patent: 6956763 (2005-10-01), Akerman et al.
patent: 6956764 (2005-10-01), Engel et al.
patent: 2004/0085681 (2004-05-01), Kai et al.

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