Semiconductor device having ferroelectric capacitors

Details Semiconductor device having ferroelectric capacitors Semiconductor device having ferroelectric capacitors

2006-02-07

2006-02-07

Quach, T. N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000, C257S308000

Reexamination Certificate

active

06995417

ABSTRACT:
Disclosed is a semiconductor device comprising a semiconductor substrate, an insulating region provided on the semiconductor substrate, a first capacitor provided above the insulating region, a second capacitor provided above the insulating region and adjacent to the first capacitor, a conductive hydrogen-barrier film which prevents diffusion of hydrogen into the first and second capacitors and connects a bottom electrode of the first capacitor with a bottom electrode of the second capacitor, the conductive hydrogen-barrier film having a first portion interposing between the insulating region and the first capacitor and between the insulating region and the second capacitor.

REFERENCES:
patent: 6576546 (2003-06-01), Gilbert et al.
patent: 6635528 (2003-10-01), Gilbert et al.
patent: 6828161 (2004-12-01), Summerfelt et al.
patent: 6841396 (2005-01-01), Celii et al.
patent: 6876021 (2005-04-01), Martin et al.
patent: 2004/0053465 (2004-03-01), Hong
patent: 11-54718 (1999-02-01), None
patent: 2003-68993 (2003-03-01), None

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