Selective oxygen-free etching process for barrier materials

Details Selective oxygen-free etching process for barrier materials Selective oxygen-free etching process for barrier materials

2006-10-31

2006-10-31

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

C438S711000, C438S713000, C438S724000, C438S637000, C438S638000

Reexamination Certificate

active

07129171

ABSTRACT:
A method of etching a barrier layer in an integrated circuit (IC) wherein said barrier layer is composed of silicon nitride or silicon carbide. The method comprises receiving an etched IC structure having an exposed barrier layer. The method then proceeds to apply an etchant gas mixture comprising a nitrous oxide (N2O) gas and a fluoromethane (CH3F) gas. The etchant gas mixture provides a relatively high selectivity between the barrier layer to an adjacent dielectric layer.

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