Thin film phase-change memory

Details Thin film phase-change memory Thin film phase-change memory

2006-11-21

2006-11-21

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S369000

Reexamination Certificate

active

07138687

ABSTRACT:
A memory cell comprises a chalcogenide random access memory (CRAM) cell and a CMOS circuit. The CMOS circuit accesses the CRAM cell. The CRAM cell has a cross-sectional area that is determined by a thin film process (e.g., a chalcogenide deposition thin film process) and by an iso-etching process. If desired, the chalcogenide structure may be implemented in series with a semiconductor device such as a diode or a selecting transistor. The diode drives a current through the chalcogenide structure. The selecting transistor drives a current through the chalcogenide structure when enabled by a voltage at a gate terminal of the selecting transistor. The selecting transistor has a gate terminal, a source terminal, and a drain terminal; the gate terminal may be operatively coupled to a word line of a memory array, the source terminal may be operatively coupled to a drive line of the memory array, and the drain terminal may be operatively coupled to a bit line of the memory array.

REFERENCES:
patent: 6031287 (2000-02-01), Harshfield
patent: 6111264 (2000-08-01), Wolstenholme et al.
patent: 6114713 (2000-09-01), Zahorik
patent: 6189582 (2001-02-01), Reinberg et al.
patent: 6466498 (2002-10-01), Hogan
patent: 6778420 (2004-08-01), Parkinson
patent: 6873538 (2005-03-01), Hush
patent: 2004/0037106 (2004-02-01), Lu et al.
patent: 2004/0257854 (2004-12-01), Chen et al.
patent: 2005/0027409 (2005-02-01), Marshall et al.

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