Method of producing semiconductor elements using a test...

Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed

Reexamination Certificate

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C257SE21524

Reexamination Certificate

active

07098053

ABSTRACT:
Testing the production of semiconductor elements on a substrate, the semiconductor elements having a plurality of cell types, by providing at least one test structure on the substrate with a number of test cells having cell types similar to one or more of the plurality of cell types, each of the cell types having at least a first and a second local interconnect layer structure to be connected to predetermined supply voltages during use, a plurality of first and second polysilicon layer structures to provide control voltages to first and second electronic component structures, respectively, connecting in the test structure all of the plurality of first polysilicon layer structures to one another to provide an interconnected first polysilicon layer structure, and connecting in the test structure all of the plurality of second polysilicon layer structures to one another to provide an interconnected second polysilicon layer structure, providing predetermined test voltages and measuring currents resulting from the test voltages to identify production errors.

REFERENCES:
patent: 4800418 (1989-01-01), Natsui
patent: 6054721 (2000-04-01), Milor
patent: 6714031 (2004-03-01), Seki
patent: 6831294 (2004-12-01), Nishimura et al.
patent: 2003/0022401 (2003-01-01), Hamamatsu et al.
patent: 2003/0162310 (2003-08-01), Nakatuka et al.

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