Method for fabricating oxide thin films

Details Method for fabricating oxide thin films Method for fabricating oxide thin films

2006-08-08

2006-08-08

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S788000, C438S787000, C438S792000, C438S798000

Reexamination Certificate

active

07087537

ABSTRACT:
A method for fabricating a thin film oxide is provided. The method includes: forming a substrate; treating the substrate at temperatures equal to and less than 360° C. using a high density (HD) plasma source; and forming an M oxide layer overlying the substrate where M is an element selected from a group including elements chemically defined as a solid and having an oxidation state in a range of +2 to +5. In some aspects, the method uses an inductively coupled plasma (ICP) source. In some aspects the ICP source is used to plasma oxidize the substrate. In other aspects, HD plasma enhanced chemical vapor deposition is used to deposit the M oxide layer on the substrate. In some aspects of the method, M is silicon and a silicon layer and an oxide layer are incorporated into a TFT.

REFERENCES:
patent: 6514865 (2003-02-01), Evans
patent: 6689646 (2004-02-01), Joshi et al.
patent: 6716740 (2004-04-01), Wang et al.
patent: 2002/0100554 (2002-08-01), Han et al.
J. Y. Zhang and I.W. Boyd, Appl. Phys. Lett., 71, 2964 (1997).

Affiliated with

Also associated with

Rating

Method for fabricating oxide thin films does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating oxide thin films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating oxide thin films will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3676347