Plasma processing method

Details Plasma processing method Plasma processing method

2006-11-28

2006-11-28

Norton, Nadine (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S712000, C216S058000

Reexamination Certificate

active

07141510

ABSTRACT:
A plasma processing method is conducted while a thickness of a resist film being monitored, thereby preventing the thickness of the resist film from being reduced. The plasma processing method includes steps of supplying a processing gas into an airtight processing chamber, and plasma-processing a target layer formed on an object to be processed by using a resist film as a mask. The method includes a main etching process (first process) of plasma-processing the target layer while the thickness of the resist film being monitored until the reduction rate of the thickness of the resist film reaches a predetermined value, and an over-etching process (second process) of plasma-processing the target layer in a changed process condition in which selectivity against the resist film is higher than in the first process.

REFERENCES:
patent: 6326307 (2001-12-01), Lindley et al.
patent: 6653734 (2003-11-01), Flanner et al.

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