Method of forming a conformal spacer adjacent to a gate...

Details Method of forming a conformal spacer adjacent to a gate... Method of forming a conformal spacer adjacent to a gate...

2006-06-20

2006-06-20

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S303000, C438S595000

Reexamination Certificate

active

07064071

ABSTRACT:
In a process for forming L-shaped sidewall spacers for a conducive line element, such as a gate electrode structure, the sacrificial spacers are formed of a material having a similar etch behavior as the material of the finally obtained L-shaped spacer, thereby improving tool utilization and reducing process complexity compared to conventional processes. In one particular embodiment, a spacer layer stack is provided having a first etch stop layer, a first spacer layer, a second etch stop layer, and a second spacer layer, wherein the first and second spacer layers are comprised of silicon nitride.

REFERENCES:
patent: 5573965 (1996-11-01), Chen et al.
patent: 6534388 (2003-03-01), Lin et al.
patent: 6551887 (2003-04-01), Kwon et al.
patent: 6706605 (2004-03-01), Ekbote et al.
patent: 2002/0182795 (2002-12-01), Bae et al.

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