Semiconductor device

Details Semiconductor device Semiconductor device

2006-08-15

2006-08-15

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257S355000, C257S369000, C257S368000, C257S370000

Reexamination Certificate

active

07091554

ABSTRACT:
A semiconductor device with high turn off capability includes a plurality of stripe trench lines which are provided in each of adjacent cell regions of a semiconductor layer in parallel and extended from one cell region toward the other cell region, a gate insulating film formed in each of the trench lines, and a gate electrode embedded in each of the trench lines with the gate insulating film interposed therebetween. In this semiconductor device, in each of the cell regions, part of adjacent ends of the plurality of trench lines on a side of the other cell region are connected to each other by connecting portions, and portions between the remaining adjacent ends are open. Moreover, at least one of the connecting portions of one cell region faces one of the open portions of the other cell region.

REFERENCES:
patent: 5468982 (1995-11-01), Hshieh et al.
patent: 5998837 (1999-12-01), Williams
patent: 2000-216385 (2000-08-01), None
patent: 2001-168329 (2001-06-01), None
U.S. Appl. No. 10/740,676, filed Dec. 22, 2003, Muraoka et al.
U.S. Appl. No. 09/525,055, filed Mar. 14, 2000, Muraoka et al.

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