Semiconductor devices and methods of manufacturing the same

Details Semiconductor devices and methods of manufacturing the same Semiconductor devices and methods of manufacturing the same

2006-08-22

2006-08-22

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S163000, C257SE21437

Reexamination Certificate

active

07095086

ABSTRACT:
Semiconductor devices and methods of manufacturing the same are provided. A disclosed semiconductor device includes: a semiconductor substrate; a gate insulating layer on the active region of the semiconductor substrate; a gate on the gate insulating layer; LDD regions on opposite sides of the gate insulating layer and located in the semiconductor substrate; source/drain regions on the LDD regions; and silicide layers on the surfaces of the gate and the source/drain regions. The source/drain regions are formed by doping impurities in a silicon layer grown by a selective epitaxy.

REFERENCES:
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patent: 5683924 (1997-11-01), Chan et al.
patent: 5828103 (1998-10-01), Hsu
patent: 5920104 (1999-07-01), Nayak et al.
patent: 6359310 (2002-03-01), Gonzalez et al.
patent: 6562687 (2003-05-01), Deleonibus et al.

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