Semiconductor memory device equipped with memory transistor...

Details Semiconductor memory device equipped with memory transistor... Semiconductor memory device equipped with memory transistor...

2006-06-27

2006-06-27

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S326000, C257S314000

Reexamination Certificate

active

07067872

ABSTRACT:
A semiconductor memory device provided with a memory cell region having first gate electrodes and a peripheral circuit region having second gate electrodes includes first gate electrodes arranged a first distance apart from each other on a semiconductor substrate, second gate electrodes arranged a second distance, which is larger than the first distance, apart from each other on the semiconductor substrate, first diffusion layers formed in the semiconductor substrate, the first diffusion layers sandwiching the first gate electrodes, second diffusion layers formed in the semiconductor substrate, the second diffusion layers sandwiching the second gate electrodes, a first insulating film formed on the first diffusion layer, second insulating films formed on the side surfaces of the second gate electrodes, first silicide films formed on the first gate electrodes, second silicide films formed on the second gate electrodes, and third silicide films formed on the second diffusion layers.

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patent: 2001-102545 (2001-04-01), None
patent: 2001-0039946 (2001-05-01), None

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