Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2006-12-12
2006-12-12
Hur, J. H. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S226000, C365S227000, C365S233100
Reexamination Certificate
active
07149131
ABSTRACT:
A semiconductor memory device reduces power consumption with maintaining quality of an internal power voltage and a core voltage. The semiconductor memory device reduces power consumption with sufficiently maintaining a core voltage during precharge. The semiconductor memory device includes a command decoder receiving external control signals to output an active signal and a precharge signal, an internal power voltage generation controlling unit receiving the active signal and the precharge signal for activating an internal power voltage active signal for a predetermined time, a core voltage generation controlling unit receiving the active signal, the precharge signal and the internal power voltage active signal for activating a core voltage active signal for a predetermined time, an internal power voltage generating unit for generating an internal power voltage during the activation period of the internal power voltage active signal; and a core voltage generating unit for generating a core voltage during the activation period of the core voltage active signal.
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Choi Jun-Gi
Kim Yong-Kyu
Hur J. H.
Hynix / Semiconductor Inc.
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