Semiconductor memory device and internal voltage generating...

Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator

Reexamination Certificate

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Details

C365S226000, C365S227000, C365S233100

Reexamination Certificate

active

07149131

ABSTRACT:
A semiconductor memory device reduces power consumption with maintaining quality of an internal power voltage and a core voltage. The semiconductor memory device reduces power consumption with sufficiently maintaining a core voltage during precharge. The semiconductor memory device includes a command decoder receiving external control signals to output an active signal and a precharge signal, an internal power voltage generation controlling unit receiving the active signal and the precharge signal for activating an internal power voltage active signal for a predetermined time, a core voltage generation controlling unit receiving the active signal, the precharge signal and the internal power voltage active signal for activating a core voltage active signal for a predetermined time, an internal power voltage generating unit for generating an internal power voltage during the activation period of the internal power voltage active signal; and a core voltage generating unit for generating a core voltage during the activation period of the core voltage active signal.

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