Semiconductor device

Details Semiconductor device Semiconductor device

2006-11-21

2006-11-21

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S310000, C257S410000, C257S411000, C257SE21267

Reexamination Certificate

active

07138692

ABSTRACT:
A gate insulating film and a gate electrode are formed on a silicon substrate. The gate insulating film contains at least hafnium, oxygen, fluorine, and nitrogen. The fluorine concentration is high in the vicinity of an interface with the silicon substrate and progressively decreases with decreasing distance from the gate electrode. The nitrogen concentration is high in the vicinity of an interface with the gate electrode and progressively decreases with decreasing distance from the silicon substrate. The fluorine concentration in the vicinity of the interface with the silicon substrate is preferably 1×1019cm−3or more. The nitrogen concentration in the vicinity of the interface with the gate electrode is preferably 1×1020cm−3or more.

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