Copper interconnect seed layer treatment methods and...

Details Copper interconnect seed layer treatment methods and... Copper interconnect seed layer treatment methods and...

2006-11-14

2006-11-14

Phasge, Arun S. (Department: 1753)

Chemistry: electrical and wave energy

Apparatus

Electrolytic

C204S227000, C204S242000

Reexamination Certificate

active

07135098

ABSTRACT:
A method for making semiconductor interconnect features in a dielectric layer is provided. The method includes depositing a copper seed layer over a barrier layer that is formed over the dielectric layer and into etched features of the dielectric layer. The copper seed layer is then treated to remove an oxidized layer from over the copper seed layer. The method then moves to electroplating a copper fill layer over the treated copper seed layer. The copper fill layer is configured to fill the etched features of the dielectric layer.

REFERENCES:
patent: 6033584 (2000-03-01), Ngo et al.
patent: 6331490 (2001-12-01), Stevens et al.

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