Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2006-12-05

2006-12-05

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29300, C257S316000, C257S751000

Reexamination Certificate

active

07145200

ABSTRACT:
A nonvolatile semiconductor memory device includes a semiconductor substrate, a memory cell region which is disposed on the semiconductor substrate and has a transistor array of a stacked gate structure having a floating gate, a Ti-containing barrier which is disposed in an upper layer of the memory cell region and covers the memory cell region, and a passivation layer disposed above the Ti-containing barrier. A method of manufacturing the nonvolatile semiconductor memory device includes forming a memory cell structure on a memory cell region on a semiconductor substrate and forming a necessary element structure in a peripheral circuit region except for the memory cell region on the semiconductor substrate, forming an interlayer insulating layer covering the memory cell structure and the element structure, forming a Ti-containing conductive film on the interlayer insulating layer, and forming a Ti-containing wiring layer in an upper layer of the peripheral circuit region by selectively etching the Ti-containing conductive film and forming a Ti-containing barrier in an upper layer of the memory cell region, the barrier covering the memory cell region.

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English translation for JP 11-008355 (Jan. 12, 1999).

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