Display system and method of producing the same

Details Display system and method of producing the same Display system and method of producing the same

2006-06-13

2006-06-13

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S028000, C438S039000, C438S166000

Reexamination Certificate

active

07060542

ABSTRACT:
Disclosed are a display system and a method of producing the same. In the present invention, a hexagonal pyramid shaped GaN semiconductor light-emitting device selectively crystal-grown is fixed on an upper surface of a substrate by embedding it in an insulation layer formed of an epoxy resin. Then the insulation layer is selectively dry etched in an oxygen plasma atmosphere to expose an upper end portion of the GaN semiconductor light-emitting device. A conductor film is formed on the entire surface, and a required portion of the conductor film is left as a lead-out electrode while the unrequired portion is removed by lithography.

REFERENCES:
patent: 5701321 (1997-12-01), Hayafuji et al.
patent: 6320209 (2001-11-01), Hata et al.
patent: 6410942 (2002-06-01), Thibeault et al.
patent: 7-094124 (1995-04-01), None
patent: 7-142579 (1995-06-01), None
Wolf and Tauber; Silicon Processing for the VLSI Era vol. 1: Process Technology pp. 541 and 546; 1986 Lattice Press; Sunset Beach, CA.

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