Method of and apparatus for tailoring an etch profile

Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C216S067000, C216S059000, C156S345330, C156S345340, C204S298070, C204S298320, C204S298330

Reexamination Certificate

active

07147793

ABSTRACT:
An etch profile tailoring system (100), for use with an etching process carried out on a wafer (130), has a scavenging plate (170) with a baseline etch profile, and at least one etch profile tuning structure (such as a plug) (160) replaceably disposed with respect to the scavenging plate (170) and configured to alter the baseline etch profile during the etching process so as to arrive at a desired etch profile. A method of performing maintenance on an etch profile tailoring system (100) involves the steps of performing an etching process on a wafer in accordance with a desired etch profile, determining whether or not maintenance should be performed, and (if the maintenance decision indicates that maintenance should be performed) replacing with a second plug before conducting an etching process on additional wafers.

REFERENCES:
patent: 4342901 (1982-08-01), Zajac
patent: 5628869 (1997-05-01), Mallon
patent: 5925212 (1999-07-01), Rice et al.
patent: 5997686 (1999-12-01), Lardon et al.
patent: 6090303 (2000-07-01), Collins et al.
patent: 6872259 (2005-03-01), Strang
patent: 2003/0042227 (2003-03-01), Fink

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of and apparatus for tailoring an etch profile does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of and apparatus for tailoring an etch profile, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of and apparatus for tailoring an etch profile will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3662241

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.