Sensing scheme for programmable resistance memory using...

Details Sensing scheme for programmable resistance memory using... Sensing scheme for programmable resistance memory using...

2006-06-13

2006-06-13

Yoha, Connie C. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S189011, C365S189070, C365S233100, C365S236000

Reexamination Certificate

active

07061789

ABSTRACT:
A method and apparatus for sensing the resistance state of data in a resistance memory cell by using the voltage coefficient of the cell instead of only its resistance. A voltage potential is applied across the resistance memory cell allowing the voltage coefficient of the cell to be determined and subsequently used to determine the logic state of the cell.

REFERENCES:
patent: 6188615 (2001-02-01), Perner et al.
patent: 6317375 (2001-11-01), Perner
patent: 6504750 (2003-01-01), Baker
patent: 6577525 (2003-06-01), Baker
patent: 6781906 (2004-08-01), Perner et al.
patent: 6891768 (2005-05-01), Smith et al.

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