Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-02-28
2006-02-28
Thomas, Tom (Department: 2815)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S216000, C438S287000, C438S769000, C438S775000, C438S786000
Reexamination Certificate
active
07005393
ABSTRACT:
A method of fabricating a semiconductor device which includes introducing, after a step of patterning a gate electrode, nitrogen atoms into an oxide film covering a device region on a semiconductor substrate, by exposing said oxide film to an atmosphere containing-nitrogen, such that said nitrogen atoms do not reach a region underneath said gate electrode, covering, after said step of introducing nitrogen atoms, said oxide film including said gate electrode by a CVD oxide film continuously without taking out said semiconductor substrate out of a processing chamber and forming a sidewall oxide film on a sidewall surface of said gate electrode by etching back said CVD oxide film.
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Díaz José R.
Fujitsu Limited
Thomas Tom
Westerman Hattori Daniels & Adrian LLP
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