Method and structure for generating offset fields for use in...

Details Method and structure for generating offset fields for use in... Method and structure for generating offset fields for use in...

2006-11-07

2006-11-07

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000, C257S427000

Reexamination Certificate

active

07133309

ABSTRACT:
A method for generating an offset field for a magnetic random access memory (MRAM) device includes forming a first pinned layer integrally with a wordline, and forming a second pinned layer integrally with a bitline. An MRAM cell is disposed between the wordline and the bitline, the MRAM cell including a reference layer, an antiparallel free layer and a tunnel barrier therebetween. The first pinned layer is formed with an internal magnetization in a manner so as to create a first external field generally perpendicular to a long axis of the wordline, and the second pinned layer is formed with an internal magnetization in a manner so as to create a second external field generally perpendicular to a long axis of the bitline.

REFERENCES:
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patent: 6865109 (2005-03-01), Covington
patent: 2005/0253128 (2005-11-01), Worledge
patent: 2005/0274997 (2005-12-01), Gaides et al.
M. Durlam et al.; “A 0.18um 4Mb Toggling MRAM;” IEEE 2003.
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D.C. Worledge, “Spin Flop Switching For Magnetic Random Access Memory”, Applied Physics Letters, vol. 84, No. 22, May 31, 2004, pp. 4559-4561.

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