Bonding of substrates

Details Bonding of substrates Bonding of substrates

2006-12-12

2006-12-12

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S795000, C438S798000

Reexamination Certificate

active

07148122

ABSTRACT:
In one embodiment, a method comprises placing a first and a second substrate into a reaction chamber, the first substrate being made of an indium antimonide material and having a first surface and the second substrate being made of a silicon or a silicon dioxide material and having a second surface; exposing the first and second surfaces to an oxygen plasma; forming a bond between the first and the second substrates by placing the first surface in contact with the second surface; and annealing the first and the second substrates to strengthen the bond.

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patent: 6180496 (2001-01-01), Farrens et al.
patent: 6563133 (2003-05-01), Tong
patent: 6645828 (2003-11-01), Farrens
patent: 6699798 (2004-03-01), Rockford
patent: 2004/0121556 (2004-06-01), Kim et al.
patent: 2004/0201023 (2004-10-01), Yamazaki et al.

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