Silicon-on-insulator body- and dual gate-coupled diode for elect

Details Silicon-on-insulator body- and dual gate-coupled diode for elect Silicon-on-insulator body- and dual gate-coupled diode for elect

1998-01-05

2000-03-07

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

H01L 2976, H01L 2994, H01L 31062, H01L 31113, H01L 31119

Patent

active

060343974

ABSTRACT:
A body and dual gate coupled diode for silicon-on-insulator (SOI) technology is disclosed. The body and dual gate coupled diode is formed from a SOI field-effect transistor (FET) structure. The source of the SOI FET structure forms the first terminal of the diode. The drain of the SOI FET structure forms the second terminal of the diode. The SOI FET structure includes two gates, which are tied to the body of the SOI FET structure. An SOI circuit comprising at least one body and dual gate coupled diode formed from the SOI FET structure provides electrostatic discharge (ESD) protection.

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IBM Tech Disc vol. 14 No. 9, Feb. 1972, "Surface Controlled Semiconductor Arrangement", Remshardt et al.

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