Semiconductor device including capacitance element having high a

Details Semiconductor device including capacitance element having high a Semiconductor device including capacitance element having high a

1997-02-21

2000-03-07

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257311, 257532, 438253, 438396, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

060343915

ABSTRACT:
First conductive layers having structures similar to that of a storage node of a memory cell capacitor are isolated from each other, and are commonly and electrically connected to a third conductive layer. A second conductive layer corresponding to a cell plate of the memory cell capacitor is formed on the first conductive layers with a capacitor insulating film therebetween. Opposed portions of the first and second conductive layers have large areas, so that a large number of parallel unit capacitance elements can be formed within a limited area, and a capacitance element can have a good area efficiency.

REFERENCES:
patent: 4879631 (1989-11-01), Johnson et al.
patent: 4980799 (1990-12-01), Tobita
patent: 5032892 (1991-07-01), Chern et al.
patent: 5243209 (1993-09-01), Ishii
patent: 5302844 (1994-04-01), Mizuno et al.
patent: 5336922 (1994-08-01), Sakamoto
patent: 5465058 (1995-11-01), Krenik et al.
patent: 5739576 (1998-04-01), Shirley et al.

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