Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-08
2006-08-08
Flynn, Nathan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S059000, C257S072000, C349S042000, C349S043000
Reexamination Certificate
active
07087963
ABSTRACT:
On a glass substrate (10), an insulating protective layer (11) comprising SiO2film is formed, and an active layer (12) comprising a p-Si film (12) is formed thereon. Further, a first gate insulating film (13) comprising an SiN film which serves as a lower layer and a second gate insulating film (14) comprising an SiN film which serves as an upper layer are stacked thereon. The second gate insulating layer (14) is then removed by etching with a gate electrode (15) formed thereon acting as a mask. Thus, ions can be doped only through the first gate insulating film (13) to the p-Si film (12) with a low acceleration energy.
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Stanley Wolf, Ph.D. et al., Silicon Processing for The VLSI Era, vol. 1, pp. 521-522.
Flynn Nathan
Sanyo Electric Co,. Ltd.
Sefer Ahmed N.
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