Self-aligned V0-contact for cell size reduction

Details Self-aligned V0-contact for cell size reduction Self-aligned V0-contact for cell size reduction

2006-06-13

2006-06-13

Richards, N. Drew (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S310000

Reexamination Certificate

active

07061035

ABSTRACT:
An FeRAM comprising includes a ferroelectric material sandwiched between a top electrode and a bottom electrode. A V0-contact provides an electrical connection with an underlying CS-contact. The V0-contact is aligned using the bottom electrode. A liner layer covers a sidewall of the bottom electrode and provides a stop to an etch a hole forming the V0-contact. A method is utilized to form a V0-contact in an FeRAM comprising. An Fe capacitor of the FeRAM is encapsulated, a bottom electrode is etched, a liner layer is deposited covering a sidewall of the bottom electrode, and a hole is etched for the VO-contact until the etching is stopped by the liner layer.

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