Data reading method, data writing method, and semiconductor...

Details Data reading method, data writing method, and semiconductor... Data reading method, data writing method, and semiconductor...

2006-11-28

2006-11-28

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S189070, C365S189090, C365S207000, C365S210130

Reexamination Certificate

active

07142444

ABSTRACT:
In a data reading method, a first reading pulse is applied to a memory cell to generate a first signal corresponding to data stored in the memory cell, reference signal generating data corresponding to a high level side is written to the memory cell, a second reading pulse is applied to the memory cell to generate a second signal corresponding to the reference signal generating data, and a reference signal is generated on the basis of the second signal. Then the first signal and the reference signal are compared with each other to determine the stored data stored in the memory cell. In data writing, high-level data is first written to the memory cell without using a bit line.

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2001 Symposium on VLSI Circuit Digest of Technical Papers, “A Bit-Line GND Sense Technique for Low-Voltage Operation FeRAM”, Kawashima, et al.
ISSC 2003 Session 16, “Non-Volatile Memory”, Sakimura, et al, “A 512 kb Cross-Point Cell MRAM”.

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