Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

2006-05-02

2006-05-02

Ho, Tan (Department: 2821)

Coherent light generators

Particular active media

Semiconductor

C372S099000

Reexamination Certificate

active

07039085

ABSTRACT:
A semiconductor laser device includes a dielectric multilayer film with a reflectance of 40% or more, on at least one of optical exit faces of a laser chip. The dielectric multilayer film includes a film of tantalum oxide (Ta2O5) and another film of a dielectric oxide, such as aluminum oxide (Al2O3), and silicon oxide (SiO2). The tantalum oxide film has an optical absorption coefficient smaller than that of silicon (Si) and thermal stability in emission superior to that of titanium oxide (TiO2), thereby remarkably improving the catastrophic optical damage degradation level of the laser chip.

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