Field memory having a line memory in a memory cell array

Static information storage and retrieval – Addressing – Plural blocks or banks

Reexamination Certificate

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C365S230060, C365S230080

Reexamination Certificate

active

07050350

ABSTRACT:
A field memory includes a memory cell array, a first decoder, a second decoder, a sense amplifier circuit, a transfer gate circuit, a write register and a read register. The memory cell array has a field memory for storing data and a line memory for temporarily storing data. The first decoder is coupled to the field memory for selecting a memory cell in the field memory. The second decoder is coupled to the line memory for selecting a memory cell in the line memory. The sense amplifier circuit is coupled to the, memory cell array. The transfer gate circuit is coupled to the sense amplifier circuit. The write register is coupled to the transfer gate circuit for temporarily storing data to be written in the memory cell array. The first read register is coupled to the transfer gate circuit for temporarily storing data read from the memory cell array.

REFERENCES:
patent: 5606527 (1997-02-01), Kwack et al.
patent: 5708618 (1998-01-01), Toda et al.
patent: 5978303 (1999-11-01), Takasugi et al.
patent: 5983367 (1999-11-01), Higuchi et al.
patent: 6333889 (2001-12-01), Arimoto
patent: 6445632 (2002-09-01), Sakamoto
patent: 6707714 (2004-03-01), Kawamura
patent: 2001/0014046 (2001-08-01), Sakamoto
patent: 2003/0026163 (2003-02-01), Toda et al.
patent: 06-060699 (1994-03-01), None
patent: 06-176598 (1994-06-01), None

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