Method of manufacturing semiconductor devices

Details Method of manufacturing semiconductor devices Method of manufacturing semiconductor devices

2006-08-29

2006-08-29

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S530000, C257SE21135, C257SE21057

Reexamination Certificate

active

07098120

ABSTRACT:
A method of manufacturing semiconductor devices includes forming element isolation regions in a semiconductor substrate, a gate insulation film in an element region surrounded by the element isolation regions and an impurity doped metal silicide film on the gate insulation film; irradiating energy beams to heat the silicide film; forming a gate electrode film by patterning the silicide film; and forming source and drain regions by doping an impurity into said element region by using at least the gate electrode film as a mask.

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Notification of Reasons for Rejection issued by the Japanese Patent Office on May 30, 2006, for Japanese Patent Application No. 2000-300446, and English-language translation thereof.

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