Nanolaminate film atomic layer deposition method

Details Nanolaminate film atomic layer deposition method Nanolaminate film atomic layer deposition method

2006-05-30

2006-05-30

Toledo, Fernando L. (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C117S089000, C427S126400, C257SE29165

Reexamination Certificate

active

07053009

ABSTRACT:
An atomic layer deposition method to deposit an oxide nanolaminate thin film is provided. The method employs a nitrate ligand in a first precursor as an oxidizer for a second precursor to form the oxide nanolaminates. Using a hafnium nitrate precursor and an aluminum precursor, the method is well suited for the deposition of a high k hafnium oxide/aluminum oxide nanolaminate dielectric for gate dielectric or capacitor dielectric applications on a hydrogen-terminated silicon surface.

REFERENCES:
patent: 6203613 (2001-03-01), Gates et al.
patent: 6420279 (2002-07-01), Ono et al.

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