Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-11-21
2006-11-21
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S347000
Reexamination Certificate
active
07138655
ABSTRACT:
A TFT array panel includes: first and second gate members connected to each other; a gate insulating layer formed on the first and the second gate members; first and second semiconductor members formed on the gate insulating layer opposite the first and the second gate members, respectively; first and second source members connected to each other and located near the first and the second semiconductor members, respectively; first and second drain members located near the first and the second semiconductor members, respectively, and located opposite the first and the second source members with respect to the first and the second gate members, respectively; and a pixel electrode connected to the first and the second drain members. The first gate, semiconductor, source, and drain members form a first TFT, and the second gate, semiconductor, source, and drain members form a second TFT.
REFERENCES:
patent: 6608357 (2003-08-01), Yamazaki et al.
Baek Seung-Soo
Kim Dong-Gyu
Tak Young-Mi
Youn Joo-Ae
F. Chau & Associates LLC
Pham Hoai
Samsung Electronics Co,. Ltd.
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