Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation
Reexamination Certificate
2006-08-08
2006-08-08
Smith, Bradley K. (Department: 2891)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Mesa formation
C438S039000, C438S040000, C438S047000, C257S096000, C257S097000, C257S609000
Reexamination Certificate
active
07087449
ABSTRACT:
An active semiconductor device, such as, buried heterostructure semiconductor lasers, LEDs, modulators, photodiodes, heterojunction bipolar transistors, field effect transistors or other active devices, comprise a plurality of semiconductor layers formed on a substrate with one of the layers being an active region. A current channel is formed through this active region defined by current blocking layers formed on adjacent sides of a designated active region channel where the blocking layers substantially confine the current through the channel. The blocking layers are characterized by being an aluminum-containing Group III–V compound, i.e., an Al-III–V layer, intentionally doped with oxygen from an oxide source. Also, wet oxide process or a deposited oxide source may be used to laterally form a native oxide of the Al-III–V layer. An example of a material system for this invention useful at optical telecommunication wavelengths is InGaAsP/InP where the Al-III–V layer comprises InAlAs:O or InAlAs:O:Fe. Other materials for the blocking layers may be InAlGaAs or alternating layers or alternating monolayers of AlAs/InAs. Thus, the O-doped blocking layers may be undoped, impurity doped or co-doped with Fe.
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Joyner Charles H.
Kish, Jr. Fred A.
Mathis Sheila K.
Schneider Richard P.
Carothers, Jr. W. Douglas
Fulk Steven J
Infinera Corporation
Smith Bradley K.
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