Method of fabricating a device including compound semiconductor

Details Method of fabricating a device including compound semiconductor Method of fabricating a device including compound semiconductor

1997-09-29

2000-04-04

Bowers, Charles

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

438481, 438519, 438514, 438 46, H01L 21208

Patent

active

060460962

ABSTRACT:
A method of fabricating a compound semiconductor layer structure including a layer containing nitrogen is provided. In a method of fabricating a device including a compound semiconductor layer structure, a portion of crystal of compound semiconductor, which is to be at least a portion of a function layer of the device, is irradiated with material including at least nitrogen, and element of V group of the irradiated portion is substituted by the nitrogen. In a fabrication method, a thickness of the N-substituted layer does not exceed its critical layer thickness. In a fabrication method, a depth of the N-substituted portion is controlled by using material for oppressing the substitution by nitrogen.

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