Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-09
2006-05-09
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S411000, C257S412000, C438S301000, C438S585000, C438S778000, C438S782000, C438S785000
Reexamination Certificate
active
07042055
ABSTRACT:
In a miniaturized field effect transistor, the roughness of the interface between a gate dielectric film and a gate electrode is controlled on an atomic scale. The thickness variation of the gate dielectric film is lowered, whereby a field effect transistor with high mobility is manufactured. An increase in the mobility in the field effect transistor can be achieved not only in the case of using a conventional SiO2thermal oxide film as the gate dielectric film but also in the case of using a high dielectric material for the gate dielectric film.
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Mine Toshiyuki
Onai Takahiro
Saito Shin-ichi
Torii Kazuyoshi
Miles & Stockbridge PC
Pham Long
Rao Shrinivas H.
Renesas Technology Corp.
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