Method of making a bottom spin valve

Metal working – Method of mechanical manufacture – Electrical device making

Reexamination Certificate

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Details

C029S603080, C029S603130, C029S603120, C360S324110, C360S324100, C360S322000, C360S326000

Reexamination Certificate

active

06993827

ABSTRACT:
Two embodiments of a GMR sensor of the bottom spin valve (BSV) spin filter spin valve (SFSV) type are provided, together with methods for their fabrication. In one embodiment, the sensor has an ultra thin (<20 angstroms) single free layer and a composite high-conductance layer (HCL), providing high output, low coercivity and positive magnetostriction. In a second embodiment, the sensor has a composite free layer and a single HCL, also having high output, low coercivity and positive magnetostriction. The sensors are capable of reading densities exceeding 60 Gb/in2.

REFERENCES:
patent: 5793279 (1998-08-01), Nepela
patent: 6201671 (2001-03-01), Pinarbasi
patent: 6208492 (2001-03-01), Pinarbasi
patent: 6222707 (2001-04-01), Huai et al.
patent: 6338899 (2002-01-01), Fukuzawa et al.
patent: 6400536 (2002-06-01), Gill
patent: 6404606 (2002-06-01), Pinarbasi
patent: 5-73975 (1993-03-01), None
Hong et al., “Effect of Thin Oxide Capping on Interlayer Coupling in Spin Valves”, IEEE Transactions on Magnetics, vol. 36, No. 5, Sep. 2000, pp. 2629-2631.
H. Iwasaki et al.,“Spin Filter Spin Valve Heads with Ultrathin CoFe Free Layers,” Abstract BA-04, 1999 Intermag, Conference.
U.S. Appl. No. 10/124,004, filed Apr. 17, 2002, assigned to the same assignee, “Structure and Process to Fabricate Lead Overlay (LOL) On the Bottom Spin Valve”.
U.S. Appl. No. 10/308,597, filed Dec. 3, 2002 assigned to same assignee, “Novel Seed Layers for Fabricating Spin Valve Heads for Ultra-High Density Recordings” .
U.S. Appl. No. 10/460,088, filed Jun. 12, 2003, assigned to same assignee, “A Novel Structure/Method to Form Bottom Spin Valves for Ultra-High Density”.

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