Method and apparatus for a flash memory device comprising a...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C438S593000

Reexamination Certificate

active

07053444

ABSTRACT:
A method for forming a flash memory device having a local interconnect connecting source regions of a plurality of transistors within a sector allows for a highly selective wet etch of a dielectric region overlying the source region. An embodiment of the method comprises the use of an etch-resistant layer covering various features such as any gate oxide remaining over the source region, spacers along sidewalls of the transistor stacks, and a capping layer of the transistor. An in-process semiconductor device resulting from the inventive method is also disclosed.

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