Photomask, method for forming the same,and method for...

Details Photomask, method for forming the same,and method for... Photomask, method for forming the same,and method for...

2006-06-13

2006-06-13

Rosasco, S. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

07060395

ABSTRACT:
A mask pattern40including a light-shielding portion41constituted by a light-shielding film made of a chromium film or the like and phase shifters42and43is formed on a transparent substrate30.The phase shifters42and43generate a phase difference of 180 degrees with respect to exposure light between the phase shifters and the transparent substrate30.A first light intensity generated in a light-shielded image formation region corresponding to the mask pattern40on an exposed material by the exposure light transmitted through the phase shifters42and43is not more than four times a second light intensity generated in the light-shielded image formation region by the exposure light that is transmitted through the periphery of the mask pattern40on the transparent substrate30and goes into the back side of the mask pattern40.

REFERENCES:
patent: 5718829 (1998-02-01), Pierrat
patent: 3-11345 (1991-01-01), None
patent: 3-177841 (1991-08-01), None
patent: 05-297565 (1993-11-01), None
patent: 05-297566 (1993-11-01), None
patent: 9-115809 (1997-05-01), None
patent: 09-115809 (1997-05-01), None
patent: 9-127676 (1997-05-01), None
patent: 9-127677 (1997-05-01), None
patent: 2000-10255 (2000-01-01), None
patent: 2000-10255 (2000-01-01), None
patent: 2000-105451 (2000-04-01), None
patent: WO 01/35166 (2001-05-01), None
“The Application of Alternating Phase-shifting Masks to 140 nm Gate Patterning (II): Mask Design and Manufacturing Tolerances” Hua-Yu Liu, et al., SPIE, vol. 3334, pp. 2-14, 25-27 Feb. 1998.

Affiliated with

Also associated with

Rating

Photomask, method for forming the same,and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photomask, method for forming the same,and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photomask, method for forming the same,and method for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3643885