Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2006-10-17
2006-10-17
Pham, Thanhha (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S003000, C257S004000
Reexamination Certificate
active
07122824
ABSTRACT:
A contact structure for a PCM device is formed by an elongated formation having a longitudinal extension parallel to the upper surface of the body and an end face extending in a vertical plane. The end face is in contact with a bottom portion of an active region of chalcogenic material so that the dimensions of the contact area defined by the end face are determined by the thickness of the elongated formation and by the width thereof.
REFERENCES:
patent: 5789277 (1998-08-01), Zahorik et al.
patent: 5814527 (1998-09-01), Wolstenholme et al.
patent: 5952671 (1999-09-01), Reinberg et al.
patent: 5970336 (1999-10-01), Wolstenholme et al.
patent: 6031287 (2000-02-01), Harshfield
patent: 6238946 (2001-05-01), Ziegler
patent: 6313604 (2001-11-01), Chen
patent: 6316784 (2001-11-01), Zahorik et al.
patent: 6440837 (2002-08-01), Harshfield
patent: 6512241 (2003-01-01), Lai
patent: 6541333 (2003-04-01), Shukuri et al.
patent: 6545287 (2003-04-01), Chiang
patent: 6586761 (2003-07-01), Lowrey
patent: 6613604 (2003-09-01), Maimon et al.
patent: 6617192 (2003-09-01), Lowrey et al.
patent: 6750079 (2004-06-01), Lowrey et al.
patent: 6759267 (2004-07-01), Chen
patent: 6943365 (2005-09-01), Lowrey et al.
patent: 6969866 (2005-11-01), Lowrey et al.
patent: 2001/0002046 (2001-05-01), Reinberg et al.
patent: 2002/0017701 (2002-02-01), Klersy et al.
patent: 2002/0070401 (2002-06-01), Takeuchi et al.
patent: 2003/0075778 (2003-04-01), Klersy
patent: 2003/0219924 (2003-11-01), Bez et al.
patent: 2003/0231530 (2003-12-01), Bez et al.
patent: 2004/0012009 (2004-01-01), Casagrande et al.
patent: 2004/0113181 (2004-06-01), Wicker
patent: 2004/0166604 (2004-08-01), Ha et al.
patent: 2004/0245603 (2004-12-01), Lowrey et al.
patent: WO 00/57498 (2000-09-01), None
patent: WO 02/09206 (2002-01-01), None
U.S. Appl. No. 09/276,273, filed Mar. 25, 1999, Klersy.
Palun, L., et al., “Fabrication of Single Electron Devices by Hybrid (E-Beam/DUV) Lithography,”Microelectronic Engineering 53:167-170, 2000.
Khouri Osama
Pellizzer Fabio
Pollaccia Giorgio
Iannucci Robert
Jorgenson Lisa K.
Ovonyx Inc.
Pham Thanhha
Seed IP Law Group PLLC
LandOfFree
Sublithographic contact structure, in particular for a phase... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Sublithographic contact structure, in particular for a phase..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sublithographic contact structure, in particular for a phase... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3642937