Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-10-03
2006-10-03
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S369000
Reexamination Certificate
active
07115950
ABSTRACT:
A semiconductor device comprises; a MOS transistor formed on a semiconductor layer of an SOI substrate in which the semiconductor layer is formed on a semiconductor substrate with intervention of a buried insulating film, and a contact portion for applying to the semiconductor substrate different bias voltages in an operating state and a standby state of a semiconductor circuit including the MOS transistor.
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U.S. Appl. No. 09/660,926, filed Sep. 13, 2000.
A. Yoshino, et al., IEEE Intl. SOI Conference, Oct. 1995, “Highspeed Performance of 0.35 Mm CMOS Gates Fabriccated . . . ”, p. 4.
Copy of Korean Publication dated Apr. 30, 2002.
Nixon & Vanderhye P.C.
Prenty Mark V.
Sharp Kabushiki Kaisha
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