Semiconductor device having storage circuit which stores...

Static information storage and retrieval – Read/write circuit – Bad bit

Reexamination Certificate

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C365S225700

Reexamination Certificate

active

07085181

ABSTRACT:
A semiconductor device includes a first fuse circuit group and a plurality of second fuse circuit groups. The first fuse circuit group, in which n-bit data is written, is electrically programmable. Each of the plurality of second fuse circuit groups has a first storage unit which is electrically programmable and stores m-bit (m is an integral submultiple of n) rewrite data, and a second storage unit which stores the address of a bit to be written in the first fuse circuit group.

REFERENCES:
patent: 5835425 (1998-11-01), Berger
patent: 6490209 (2002-12-01), Vollrath et al.
patent: 6496426 (2002-12-01), Jeon et al.
patent: 6621751 (2003-09-01), Abedifard et al.
patent: 6646932 (2003-11-01), Kato et al.
patent: 2002-76126 (2002-03-01), None
patent: 2002-368096 (2002-12-01), None
U.S. Appl. No. 11/191,973, filed Jul. 29, 2005, Otsuka.
U.S. Appl. No. 10/692,951, filed Oct. 27, 2003, Otsuka.

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