Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-02-14
2006-02-14
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S368000, C257S369000, C257S401000, C257S402000, C438S199000, C438S285000
Reexamination Certificate
active
06998683
ABSTRACT:
Thin film transistor based three-dimensional CMOS inverters utilizing a common gate bridged between a PFET device and an NFET device. One or both of the NFET and PFET devices can have an active region extending into both a strained crystalline lattice and a relaxed crystalline lattice. The relaxed crystalline lattice can comprise appropriately-doped silicon/germanium. The strained crystalline lattice can comprise, for example, appropriately doped silicon, or appropriately-doped silicon/germanium. The CMOS inverter can be part of an SOI construction formed over a conventional substrate (such as a monocrystalline silicon wafer) or a non-conventional substrate (such as one or more of glass, aluminum oxide, silicon dioxide, metal and plastic).
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Kang Donghee
Micro)n Technology, Inc.
Wells St. John P.S.
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