Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2006-05-30
2006-05-30
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S758000, C438S761000, C438S762000, C438S768000
Reexamination Certificate
active
07052997
ABSTRACT:
In a DRAM fabrication process, a first oxide is provided over a transistor gate and over a substrate extending from under the gate. The deposition is non-conformal in that the oxide is thicker over the gate and over the substrate than it is on the side of the gate. A second non-conformal oxide is provided over the first non-conformal oxide. The second oxide is annealed in a boron-containing atmosphere, and the first oxide prevents boron diffusion from the second oxide into the gate and substrate. The second oxide may then serve as an etch stop, a CMP stop, or both.
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Micro)n Technology, Inc.
Norton Nadine G.
Schwegman Lundberg Woessner & Kluth P.A.
Umez-Eronini Lynette T.
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