Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2006-08-15
2006-08-15
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C438S902000, C438S975000, C257S710000, C257S924000
Reexamination Certificate
active
07091601
ABSTRACT:
A method of fabricating an apparatus including a sealed cavity and an apparatus embodying the method is disclosed. To fabricate the apparatus, a device chip including a substrate and at least one circuit element on the substrate is fabricated. Also, a cap is fabricated. The cap is attached to the device chip using single phase metal alloy to achieve sealed cavity over the circuit element. The single phase metal alloy allows the cap to be diffusion bonded to the device chip at a higher diffusivity thus allowing diffusion at a lower temperature, lower pressure, shorter period, or a combination of these.
REFERENCES:
patent: 5446316 (1995-08-01), Temple et al.
patent: 2003/0116825 (2003-06-01), Geefay et al.
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