Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-06-06
2006-06-06
Smith, Zandra V (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S321000, C257S331000
Reexamination Certificate
active
07057235
ABSTRACT:
By arranging floating spacer and gate non-volatile memory transistors in symmetric pairs, increased chip density may be attained. For each pair of such transistors, the floating gates are laterally aligned with floating spacers appearing on laterally outward edges of each floating gate. At laterally inward edges, the two transistors share a common drain electrode. The transistors are independent of each other except for the shared drain electrode. Tunnel oxide separated the floating spacer from the floating gate, but both the spacer and the gate are maintained at a common potential, thereby providing dual paths for charge exiting the tunnel oxide, as the charged is propelled by a programming voltage. The pairs of transistors can be aligned in columns with the direction of the columns orthogonal to the direction of the pairs, thereby forming a memory array.
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Atmel Corporation
Schneck Thomas
Schneck & Schneck
Smith Zandra V
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