Semiconductor device

Details Semiconductor device Semiconductor device

2006-11-14

2006-11-14

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S350000

Reexamination Certificate

active

07135735

ABSTRACT:
A semiconductor device comprising: a support substrate; an embedded insulating layer formed on the support substrate; a semiconductor layer on the embedded insulating layer; at least an element region formed in the semiconductor layer; a plurality of source/drain regions of a first conductivity type, formed in the element region at predetermined intervals; a plurality of body regions of a second conductivity type, sandwiched between a pair of adjacent ones of the source/drain regions in the element region; and a gate formed on each of the body regions with a gate insulating film being laid between them, each of the source/drain regions including: an inner high-concentration portion extending to the embedded insulating layer, and an outer low-concentration portion surrounding the inner high-concentration portion and having a direct contact with the body regions.

REFERENCES:
patent: 5567629 (1996-10-01), Kubo
patent: 2003/0032295 (2003-02-01), Park et al.
patent: 2004/0227248 (2004-11-01), Fukuzumi et al.
patent: 2005/0121710 (2005-06-01), Shino

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3630717