Semiconductor device including a local interconnection between a

Details Semiconductor device including a local interconnection between a Semiconductor device including a local interconnection between a

1995-09-01

1997-04-15

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257384, 257388, 257413, 257755, 257903, H01L 2976, H01L 2994, H01L 31062, H01L 2711

Patent

active

056212321

ABSTRACT:
A p-type silicon substrate is provided at its main surface with n-type impurity regions with a space between each other. A gate electrode is formed on a region between the n-type impurity regions with a gate insulating film therebetween. A titanium silicide layer is formed in a region extending from a surface layer of the gate electrode to a surface layer of the n-type impurity region. The titanium silicide layer forms a local interconnection. A side wall insulating film remains on a side wall of the gate electrode on which the titanium silicide layer is not formed. Thereby, the semiconductor device can have a local interconnection which has high reliability and can be formed easily.

REFERENCES:
patent: 4305200 (1981-12-01), Fu et al.
patent: 4925807 (1990-05-01), Yoshikawa
patent: 5061975 (1991-10-01), Inuishi et al.
"Titanium Nitride Local Interconnect Technology for VLSI", Thomas Tang et al., IEEE Transactions on Electron Devices, vol. ED-34, No. 3, Mar. 1987, pp. 682-688.
"Manufactuable Local Interconnect Technology Fully Compatible with Titanium Salicide Process", H. Hayashida et al., IEEE, Jun. 1991 VMIC Conference, pp. 332-334.
"A Manufacturable Process for the Formation of Self Aligned Cobalt Silicide in a Sub Micrometer CMOS Technology", Antonio Berti et al., Jun. 1992 VMIC Conference, pp. 267-273.

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