Methods for improving sensitivity of CMOS active pixel sensors

Details Methods for improving sensitivity of CMOS active pixel sensors Methods for improving sensitivity of CMOS active pixel sensors

2006-05-30

2006-05-30

Vu, Ngoc-Yen (Department: 2612)

Television

Camera, system and detail

Solid-state image sensor

C348S243000, C250S208100

Reexamination Certificate

active

07053947

ABSTRACT:
The present invention relates to a CMOS active pixel sensor which includes a compensation circuit capable of compensating a lowered pixel voltage output due to leakage current of a photodiode. The CMOS active pixel sensor having a light sensing unit for generating an output voltage when light is incident thereupon, the sensing unit having an amount of leakage current before the incidence of light. A reset unit resets the output voltage of the light sensing unit to an initial reset voltage in response to a reset signal. A sense transistor has a source, a drain coupled to a power source voltage, and a gate coupled to the output of the light sensing unit. A select transistor has a drain connected to a source of the sense transistor, and provides the voltage of the sense transistor to a bit line, in response to a select signal. A compensation unit supplies a voltage corresponding to the output voltage of the light sensing unit lowered by the leakage current.

REFERENCES:
patent: 4916307 (1990-04-01), Nishibe et al.
patent: 5912463 (1999-06-01), Mizuno et al.
patent: 6498331 (2002-12-01), Kozlowski et al.
patent: 6690423 (2004-02-01), Nakamura et al.
patent: 6747695 (2004-06-01), Afghahi

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