Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-01
2006-08-01
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S532000
Reexamination Certificate
active
07084449
ABSTRACT:
A microelectronic element is provided having a major surface, the microelectronic element including a first capacitor formed on a sidewall of a first trench, the first trench being elongated in a downwardly extending direction from the major surface. The microelectronic element further includes a second capacitor formed on a sidewall of a second trench, the second trench being elongated in a downwardly extending direction from the major surface, wherein a top of the first capacitor is disposed at a first depth from the major surface, and a top of the second capacitor is disposed at a second depth from the major surface.
REFERENCES:
patent: 5731949 (1998-03-01), Ko
patent: 6566191 (2003-05-01), Hsu et al.
Cheng Kangguo
Faltermeier Johnathan E.
Hanson David R.
Radens Carl J.
International Business Machines - Corporation
Neff Daryl K.
Schnurmann H. Daniel
Vu Hung
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