Method and system providing high flux of point of use...

Details Method and system providing high flux of point of use... Method and system providing high flux of point of use...

2006-02-21

2006-02-21

Kornakov, M. (Department: 1746)

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With means for photochemical energization of a gas using...

C250S492200

Reexamination Certificate

active

07001481

ABSTRACT:
A method and system providing a high flux of point of use activated reactive species for semiconductor processing wherein a workpiece is exposed to a gaseous atmosphere containing a transmission gas that is substantially nonattenuating to preselected wavelengths of electromagnetic radiation. A laminar flow of a gaseous constituent is also provided over a substantially planar surface of the workpiece wherein a beam of the electromagnetic radiation is directed into the gaseous atmosphere such that it converges in the laminar flow to provide maximum beam energy in close proximity to the surface of the workpiece, but spaced a finite distance therefrom. The gaseous constituent is dissociated by the beam producing an activated reactive species that reacts with the surface of the workpiece.

REFERENCES:
patent: 4260649 (1981-04-01), Dension et al.
patent: 5607601 (1997-03-01), Loper et al.
patent: 5659383 (1997-08-01), Ozawa
patent: 5669979 (1997-09-01), Elliott et al.
patent: 5814156 (1998-09-01), Elliott et al.

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